bas70tw/adw/cdw/sdw surface mount schottky diode arrays 1 2 3 4 5 6 1 2 3 4 5 6 features applications maximum ratings (per diode) rating symbol value units these devices feature electrically-isolated schottky diodes connected in various configurations housed in a very small sot-363 (sc70-6l) maximum forward voltage @ 1.0ma of 0.41v also available in lead-free plating (100% matte tin finish) maximum leakage current @ 50v of 100na reverse voltage rating of 70v rail-to-rail esd protection overshoot and undershoot switching control mobile phones and accessories video game consoles connector ports repetitive peak reverse voltage continuous reverse voltage continuous forward current non-repetitive peak forward current, t = 1sec, square wave total power dissipation (note 1) operating junction temperature range storage temperature range 3/23/2005 page 1 www.panjit.com 70 v v 70 ma 200 a 0.6 225 mw c -55 to +125 c -55 to +125 v v i i p t t rrm r f fsm tot stg t = 25c unless otherwise noted j j note 1. fr-5 board 1.0 x 0.75 x 0.062 in. sot- 363 thermal characteristics characteristic symbol units thja thermal resistance, junction to ambient 556 value r c/w marking code: a72 various configurations (see diagrams below) marking code: a70 marking code: a73 marking code: a74 bas70tw bas70adw bas70cdw BAS70SDW 123 6 54 123 6 54 isolated triple 123 6 54 123 6 54 123 6 54 123 6 54 isolated triple 123 6 54 123 6 54 123 6 54 123 6 54 common cathode 123 6 54 123 6 54 123 6 54 123 6 54 common anode 123 654 12 3 654 123 654 12 3 654 series
www.panjit.com 3/23/2005 page 2 electrical characteristics (per diode) parameter symbol min units breakdown voltage (note 1) tj = 25c unless otherwise noted conditions typ max v br br i = forward voltage (note 1) v f i = i = f f reverse leakage current (note 1) i rr v = junction capacitance c d 0vdc bias, f =1 mhz reverse recovery time (see figure 1) t rr i = 10ma, i = 10ma r = 100 ohms; measured at i = 1ma f r l 100 ua 1.0 ma 10 ma 50 v 70 - - v - - 0.41 - - 0.75 v - 100 na - 2.0 pf - 1.25 -5ns - bas70tw/adw/cdw/sdw +10 v 50 ? o utput pulse generator 50 ? in p u t sampling o scilloscope dut ? 820 ? 2.0 k ? 0.1 f i f 100 h 0.1 f +10 v 50 ? o utput pulse generator 50 ? in p u t sampling o scilloscope dut ? 820 ? 2.0 k ? 0.1 f i f 100 h 0.1 f notes: 1. a 2.0k ? variable resistor adjusted for a forward current (i f ) to 10ma 2. input pulse is adjusted to i r(peak) is equal to 10ma figure 1. reverse recovery time equivalent test circuit note 1: short duration (<300us) test pulse to minimize self heating rrec i = f 15 ma 1.0 --
fig. 3. typical reverse characteristics fig. 2. typical forward characteristics www.panjit.com 3/23/2005 page 3 fig. 4. typical capacitance typical characteristic curves (per diode) bas70tw/adw/cdw/sdw 0.001 0.010 0.100 1.000 10.000 100.000 0 20406080 reverse voltage, v r (v) reverse current, i r (ua) t j = 25c t j = 75c t j = 125c 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 forw ard voltage, v f (v) forward current, i f (ma) t j = 25c t j = 75c t j = 125c 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 0 102030405060 re ve r s e v o lt ag e , v r (v) capacitance, c (pf t j = 25c
www.panjit.com 3/23/2005 page 4 ordering information bas70xxx t/r7 - 7" reel, 3k units per reel bas70xxx t/r13 - 13" reel, 10k units per reel copyright panjit international, inc 2005 the information presented in this document is believed to be accurate and reliable. the specifications and information herein are subject to change without notice. pan jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. pan jit products are not authorized for use in life support devices or systems. pan jit does not convey any license under its patent rights or rights of others. package layout and suggested pad dimensions bas70tw/adw/cdw/sdw
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